產(chǎn)品分類
坩堝下降長(zhǎng)晶爐
所屬分類：
Ga2O3單晶生長(zhǎng)設(shè)備
概要：
本設(shè)備主要用于砷化鎵（GaAs）、磷化銦（InP）等化合物晶體生長(zhǎng)。設(shè)備由機(jī)架、安瓿支撐機(jī)構(gòu)、加熱器和控制系統(tǒng)組成，能夠?qū)崿F(xiàn)安瓿移動(dòng)和轉(zhuǎn)動(dòng)的精確控制。
關(guān)鍵詞：
坩堝下降長(zhǎng)晶爐
坩堝下降長(zhǎng)晶爐
產(chǎn)品概述/Product Introduction：
本設(shè)備主要用于砷化鎵（GaAs）、磷化銦（InP）等化合物晶體生長(zhǎng)。設(shè)備由機(jī)架、安瓿支撐機(jī)構(gòu)、加熱器和控制系統(tǒng)組成，能夠?qū)崿F(xiàn)安瓿移動(dòng)和轉(zhuǎn)動(dòng)的精確控制。
This equipmentis mainly used for crystal growth of gallium arsenide, indium phosphide and other compounds.
產(chǎn)品特點(diǎn)/Product Characteristics：
♦ 工業(yè)計(jì)算機(jī)控制系統(tǒng)(WINDOWS系統(tǒng)界面，操作方便簡(jiǎn)潔)
Industrial computer control system (WINDOWS system interface, easy and concise operation)
♦ 關(guān)鍵部件均采用進(jìn)口,確保設(shè)備的高可靠性
The key parts are imported to ensure the high reliability of the equipment
♦ 控溫精度高,溫區(qū)控溫穩(wěn)定性好
High temperature control precision and good temperature control stability in temperature zone
♦ 具有斷電報(bào)警、超溫、欠溫報(bào)警、極限超溫報(bào)警等多種安全保護(hù)功能
lt has various safety protection functions such as power failure alarm, over-temperature alarm, under-tempera-ture alarm and extreme over-temperature alarm
♦ 速度可調(diào)的梯形波、三角波及正弦波等旋轉(zhuǎn)功能
Rotation functions such as trapezoidal wave, triangular wave and sine wave with adjustable speed
♦ 單晶質(zhì)量高
High quality single crystal
♦ 晶片尺寸:4/6/8英寸
Nafer size: 4/6/8 inches
♦ 制程溫度范圍:300-2200℃
Maximum heater temperature: 2200℃
♦ 加熱器最高溫度2200℃
Maximum heater temperature: 2200℃
♦ 控溫段數(shù):多段控溫
Number ?f temperature control sections: multisections temperature control
♦ 爐腔壓力:10MPa(最大)
Chamber pressure:10MPa(Maximum)
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