MPCVD長晶爐

所屬分類：

C單晶生長設備

概要：

本設備主要是用于制備單晶金剛石?？杉ぐl(fā)高穩(wěn)定度的等離子團，從而確保單晶生長的持續(xù)性，為合成大尺寸單晶金剛石提供有力保證。

關鍵詞：

MPCVD長晶爐

MPCVD長晶爐

產(chǎn)品概述/Product Introduction：

本設備主要是用于制備單晶金剛石?？杉ぐl(fā)高穩(wěn)定度的等離子團，從而確保單晶生長的持續(xù)性，為合成大尺寸單晶金剛石提供有力保證。

The equipment is mainly used forthe preparation of single crystal diamond.It can excite the plasma cluster with high stability, thus ensuring the continuity of single crystal growth and providing a strong guarantee for the synthesis of large-size single crystal diamond.

產(chǎn)品特點/Product Characteristics：

♦ 制程溫度范圍:300-1500℃ Temperature process range: 300-1500C

♦ 氣路系統(tǒng):6路 Gas path system: 6 channels

♦ 微波功率:6-15Kw連續(xù)可調(diào) Microwave power: 6-15Kw continuously adjustable

♦ 波紋:≤1% Ripple:≤1%

♦ 微波泄露值:＜5Mw/cm2 Microwaveleakagevalue:<5Mw/cm²

♦ 沉積區(qū)域:≥100mm Deposition area:≥100 mm

♦ 極限真空:≤10Pa Limit vacuum:≤10Pa

♦ 壓力范圍:5-300Torr Pressure range: 5-300 Torr

♦ 功率穩(wěn)定性:＜2% Power stability:<2%

♦ 微波頻率:2.45GHz土50MHz Microwave frequency:2.45GHz ± 50MHz

♦ 放電區(qū)域:≥100mm Discharge area:≥100mm